@article{1292,
  keywords = {400 to 1400 K, densities, Elemental semiconductors, Gallium compounds, Ge-Si alloys, Heat capacities of solids [A6540], heat capacity, heat contents, Nonelectronic thermal conduction and heat-pulse propagation in nonmetallic solids [A6670], semiconductor, Semiconductor materials, SiGe, SiGe(GaP), Specific heat of solids, thermal conductivities, Thermal conductivity of solids, thermal diffusivities, Thermal diffusivity, thermodynamic functions},
  author = {T. Amano and B. Beaudry and K. Gschneidner and R. Hartman and Cronin Vining and C. Alexander},
  title = {High-temperature heat contents, thermal diffusivities, densities and thermal conductivities of n-type SiGe(GaP) p-type SiGe(GaP), and p-type SiGe alloys},
  abstract = {<p>The high-temperature heat contents of n-type SiGe(GaP), p-type SiGe(GaP), and p-type SiGe alloys were measured from 400 to 1400 K by using a copper block drop calorimeter. The heat capacity and related thermodynamic functions were calculated. Smoothed values of H/sub T//sup 0/-H/sub 298.15//sup o/,C/sub p/,S/sub T//sup 0/-S/sub 298.15//sup o/, and -(F/sub T//sup 0/-H/sub 298.15//sup 0/)T/sup -1/ were tabulated at 100-K intervals. Thermal diffusivities were measured by using a laser technique. Thermal conductivities were calculated from the heat capacity, thermal diffusivity, and density. (13 References).</p>
},
  year = {1987},
  journal = {Journal of Applied Physics},
  volume = {62},
  pages = {23, 819+},
  month = {1987///},
  url = {http://cvining.com/system/files/articles/vining/Amano-JAP-1987.pdf},
  doi = {10.1063/1.339712},
  language = {eng},
}