@proceedings{1280,
  keywords = {thermoelectric applications, Semiconductor materials, electrical resistivity, thermoelectric figure of merit, Ge-Si alloys, Thermoelectric conversion, carrier concentrations, Carrier density, Carrier mobility, semiconductor, Phosphorus, Arsenic, carrier mobilities, diffusion, multiple doping, SiGe:P,As alloys, V-V doping interaction},
  author = {Jean-Pierre Fleurial and Cronin Vining and A. Borshchevsky},
  title = {Multiple doping of silicon-germanium alloys for thermoelectric applications},
  abstract = {<p>It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior. (21 References).</p>
},
  year = {1989},
  journal = {Proceedings of the 24th Intersociety Energy Conversion Engineering Conference IECEC-89},
  volume = {2},
  pages = {5, 701+},
  month = {1989},
  publisher = {IEEE},
  url = {http://cvining.com/system/files/articles/vining/Fleurial-IECEC-1989.pdf},
  language = {eng},
}