@proceedings{1246,
  keywords = {Thermal conductivity, Thermoelectric effects (semiconductors/insulators) [A7220P], Nonelectronic thermal conduction and heat-pulse propagation in nonmetallic solids [A6670], Seebeck effect, Ir/sub 3/Si/sub 5/, Iridium compounds, IrSi, band gap, Doping and implantation of impurities [A6170T], doping effects, Electronic structure of crystalline semiconductor compounds and insulators [A7125T], Energy gap, IrSi/sub 3/, Os, Pt, resistivity, Seebeck values, semiconductor behaviour, Semiconductor doping, thermoelectric properties, ZT value},
  author = {C. Allevato and Cronin Vining},
  title = {Thermoelectric properties of semiconducting iridium silicides},
  abstract = {<p>The thermoelectric properties of semiconducting iridium silicides were determined for the first time. IrSi was shown to be metallic and calculated ZT value of 0.042 lies within the range of experimental values obtained for Ir<sub>3</sub>Si<sub>5</sub>&nbsp;and IrSi<sub>3</sub>. Osmium and platinum showed doping effects on the Ir<sub>3</sub>Si<sub>5</sub>&nbsp;compound. However platinum doping resulted in no significant change in the resistivity or Seebeck values of the compound IrSi<sub>3</sub>. Resistivity, Seebeck and thermal conductivity measured plots show features of classical semiconductor behaviour on both Ir<sub>3</sub>Si<sub>5</sub> and IrSi<sub>3</sub>. Band gap for the Ir/sub 3/Si/sub 5/ was estimated to be around Eg=1.2+or-0.2eV. (8 References).</p>
},
  year = {1993},
  journal = {Proceedings of the 28th Intersociety Energy Conversion Engineering Conference, IECEC-93},
  volume = {1},
  pages = {43, 239+},
  month = {1993///},
  publisher = {American Chem. Soc., Washington, DC, USA.},
  url = {http://cvining.com/system/files/articles/vining/vining-IECEC-1993.pdf},
  language = {eng},
}