@article{1240,
  keywords = {electrical resistivity, Low-field transport and mobility, piezoresistance (semiconductors/insulators) [A7220F], arc melting, Bridgman-like growth, density, Density of solids, differential thermal analysis, Electrical conductivity of crystalline semiconductors and insulators, Ir/sub 3/Si/sub 4/, Ir/sub 3/Si/sub 5/, Ir/sub 4/Si/sub 5/, Iridium compounds, IrSi, Mechanical properties of solids (related to microscopic structure) [A6220], Metallography, microprobe analysis, phase diagram, Phase diagrams, Phase equilibria, phase transitions, and critical points [A6470], polymorphism, Thermal analysis, X-ray diffraction examination of materials, X-ray powder diffraction},
  author = {C. Allevato and Cronin Vining},
  title = {Phase-Diagram and Electrical Behavior of Silicon-Rich Iridium Silicide Compounds},
  abstract = {<p>The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis (DTA), metallography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only five distinct compositions: IrSi, Ir4Si5, Ir3Si4, Ir3Si5 and IrSi(almost-equal-to 3). The existence of Ir2Si3, IrSi7, and IrSi2 could not be confirmed in this study. DTA in conjunction with X-ray powder diffraction confirm polymorphism in IrSi(almost-equal-to 3), determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 80.5 +/- 1 at.% Si was observed between IrSi(almost-equal-to 3) and silicon. Both IrSi5 and Ir3Si4 exhibit distinct metallic behavior while Ir3Si5 is semiconducting. IrSi and IrSi(almost!</p>
},
  year = {1993},
  journal = {Journal of Alloys and Compounds},
  volume = {200},
  pages = {99-105, },
  month = {1993/10/08/},
  url = {http://cvining.com/system/files/articles/vining/Allevato-JAlloysComp-1993.pdf},
  doi = {10.1016/0925-8388(93)90478-6},
  language = {eng},
}