TY - JOUR KW - PHONONS KW - Thermal conductivity KW - Electrical conductivity of other crystalline inorganic semiconductors [A7280J] KW - Thermoelectric effects (semiconductors/insulators) [A7220P] KW - Semiconductor materials KW - Hot pressing KW - Powder techniques, compaction and sintering [A8120E] KW - Seebeck coefficient KW - Boron KW - Ge-Si alloys KW - thermoelectric properties KW - Figure of merit KW - Thermoelectric effects in semiconductors and insulators KW - semiconductor KW - 300 to 1300 K KW - charge carrier scattering KW - Electrical conductivity of elemental semiconductors [A7280C] KW - Impurity electron states KW - Other heat and thermomechanical treatments [A8140G] KW - Particle size KW - particle sizes KW - Phosphorus KW - powders KW - Si/sub 0.8/Ge/sub 0.2/:B KW - Si/sub 0.8/Ge/sub 0.2/:P KW - sintered KW - Sintering AU - Cronin Vining AU - W. Laskow AU - J. Hanson AU - R. Vanderbeck AU - P. Gorsuch AB -

The thermoelectric properties of 28 sintered Si0.8 Ge0.2 alloys, heavily doped with either boron or phosphorus and prepared from powders with median particle sizes ranging from about 1-mu-m to over 100-mu-m, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size, however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes et al. [J. Appl. Phys. 10, 2899 (1964)] on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.

BT - Journal of Applied Physics DA - 1991/04/15/ DO - 10.1063/1.348408 IS - 8 LA - eng N2 -

The thermoelectric properties of 28 sintered Si0.8 Ge0.2 alloys, heavily doped with either boron or phosphorus and prepared from powders with median particle sizes ranging from about 1-mu-m to over 100-mu-m, have been determined from 300 to 1300 K. The thermal conductivity decreases with decreasing particle size, however, the figure of merit is not significantly increased due to a compensating reduction in the electrical conductivity. The thermoelectric figure of merit is in good agreement with results of Dismukes et al. [J. Appl. Phys. 10, 2899 (1964)] on similarly doped alloys prepared by zone-leveling techniques. The electrical and thermal conductivity are found to be sensitive to preparation procedure while the Seebeck coefficient and figure of merit are much less sensitive. The high-temperature electrical properties are consistent with charge carrier scattering by acoustic or optical phonons.

PY - 1991 SP - 4333 EP - 4340 EP - T2 - Journal of Applied Physics TI - Thermoelectric Properties of Pressure-Sintered Si0.8Ge0.2 Thermoelectric Alloys UR - http://cvining.com/system/files/articles/vining/Vining-JAP-1991b.pdf VL - 69 ER -