TY - CONF
KW - Thermal conductivity
KW - Electrical conductivity of other crystalline inorganic semiconductors [A7280J]
KW - Thermoelectric effects (semiconductors/insulators) [A7220P]
KW - thermoelectric figure of merit
KW - Ge-Si alloys
KW - Thermoelectric effects in semiconductors and insulators
KW - acoustic phonon scattering
KW - heavily doped semiconductor
KW - Heavily doped semiconductors
KW - high temperature transport properties
KW - hole-phonon scattering
KW - holes
KW - ionized impurity scattering
KW - large grain size
KW - long-wavelength phonons
KW - phonon scattering mechanism
KW - phonon-phonon
KW - point defect
KW - Si-Ge
KW - weak scattering
AU - Cronin Vining
AB - A model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (+or-10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of p-type silicon-germanium alloys compared to similarly doped n-type silicon-germanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20AA radius inclusions into p-type silicon-germanium alloys. (27 References).
BT - Modern Perspectives on Thermoelectrics and Related Materials
C1 - Anaheim, CA, USA. Mater. Res. Soc. 1-2 May 1991.EnglishConference Paper
DA - 1991///
LA - eng
N2 - A model is presented for the high temperature transport properties of large grain size, heavily doped p-type silicon-germanium alloys. Good agreement with experiment (+or-10%) is found by considering acoustic phonon and ionized impurity scattering for holes and phonon-phonon, point defect and hole-phonon scattering for phonons. Phonon scattering by holes is found to be substantially weaker than phonon scattering by electrons, which accounts for the larger thermal conductivity values of p-type silicon-germanium alloys compared to similarly doped n-type silicon-germanium alloys. The relatively weak scattering of long-wavelength phonons by holes raises the possibility that p-type silicon-germanium alloys may be improved for thermoelectric applications by the addition of an additional phonon scattering mechanism which is effective on intermediate and long-wavelength phonons. Calculations indicate improvements in the thermoelectric figure of merit up to 40% may be possible by incorporating several volume percent of 20AA radius inclusions into p-type silicon-germanium alloys. (27 References).
PB - Mater. Res. Soc.
PY - 1991
SP - 95
EP - 104
EP -
T2 - Modern Perspectives on Thermoelectrics and Related Materials
TI - A model for the high temperature transport properties of heavily doped p-type silicon-germanium alloys
UR - http://cvining.com/system/files/articles/vining/Vining-MRS234-1991.pdf
VL - 234
ER -