TY - CONF KW - Thermal conductivity KW - Thermoelectric effects (semiconductors/insulators) [A7220P] KW - Nonelectronic thermal conduction and heat-pulse propagation in nonmetallic solids [A6670] KW - Seebeck effect KW - Ir/sub 3/Si/sub 5/ KW - Iridium compounds KW - IrSi KW - band gap KW - Doping and implantation of impurities [A6170T] KW - doping effects KW - Electronic structure of crystalline semiconductor compounds and insulators [A7125T] KW - Energy gap KW - IrSi/sub 3/ KW - Os KW - Pt KW - resistivity KW - Seebeck values KW - semiconductor behaviour KW - Semiconductor doping KW - thermoelectric properties KW - ZT value AU - C. Allevato AU - Cronin Vining AB -

The thermoelectric properties of semiconducting iridium silicides were determined for the first time. IrSi was shown to be metallic and calculated ZT value of 0.042 lies within the range of experimental values obtained for Ir3Si5 and IrSi3. Osmium and platinum showed doping effects on the Ir3Si5 compound. However platinum doping resulted in no significant change in the resistivity or Seebeck values of the compound IrSi3. Resistivity, Seebeck and thermal conductivity measured plots show features of classical semiconductor behaviour on both Ir3Si5 and IrSi3. Band gap for the Ir/sub 3/Si/sub 5/ was estimated to be around Eg=1.2+or-0.2eV. (8 References).

BT - Proceedings of the 28th Intersociety Energy Conversion Engineering Conference, IECEC-93 C1 - Atlanta, GA, USA. 8-13 Aug. 1993 DA - 1993/// LA - eng N2 -

The thermoelectric properties of semiconducting iridium silicides were determined for the first time. IrSi was shown to be metallic and calculated ZT value of 0.042 lies within the range of experimental values obtained for Ir3Si5 and IrSi3. Osmium and platinum showed doping effects on the Ir3Si5 compound. However platinum doping resulted in no significant change in the resistivity or Seebeck values of the compound IrSi3. Resistivity, Seebeck and thermal conductivity measured plots show features of classical semiconductor behaviour on both Ir3Si5 and IrSi3. Band gap for the Ir/sub 3/Si/sub 5/ was estimated to be around Eg=1.2+or-0.2eV. (8 References).

PB - American Chem. Soc., Washington, DC, USA. PY - 1993 EP - 43 EP - 239+ T2 - Proceedings of the 28th Intersociety Energy Conversion Engineering Conference, IECEC-93 TI - Thermoelectric properties of semiconducting iridium silicides UR - http://cvining.com/system/files/articles/vining/vining-IECEC-1993.pdf VL - 1 ER -