TY - JOUR KW - electrical resistivity KW - Low-field transport and mobility KW - piezoresistance (semiconductors/insulators) [A7220F] KW - arc melting KW - Bridgman-like growth KW - density KW - Density of solids KW - differential thermal analysis KW - Electrical conductivity of crystalline semiconductors and insulators KW - Ir/sub 3/Si/sub 4/ KW - Ir/sub 3/Si/sub 5/ KW - Ir/sub 4/Si/sub 5/ KW - Iridium compounds KW - IrSi KW - Mechanical properties of solids (related to microscopic structure) [A6220] KW - Metallography KW - microprobe analysis KW - phase diagram KW - Phase diagrams KW - Phase equilibria, phase transitions, and critical points [A6470] KW - polymorphism KW - Thermal analysis KW - X-ray diffraction examination of materials KW - X-ray powder diffraction AU - C. Allevato AU - Cronin Vining AB -

The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis (DTA), metallography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only five distinct compositions: IrSi, Ir4Si5, Ir3Si4, Ir3Si5 and IrSi(almost-equal-to 3). The existence of Ir2Si3, IrSi7, and IrSi2 could not be confirmed in this study. DTA in conjunction with X-ray powder diffraction confirm polymorphism in IrSi(almost-equal-to 3), determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 80.5 +/- 1 at.% Si was observed between IrSi(almost-equal-to 3) and silicon. Both IrSi5 and Ir3Si4 exhibit distinct metallic behavior while Ir3Si5 is semiconducting. IrSi and IrSi(almost!

BT - Journal of Alloys and Compounds DA - 1993/10/08/ DO - 10.1016/0925-8388(93)90478-6 LA - eng N2 -

The iridium-silicon phase diagram on the silicon-rich side was investigated by means of X-ray powder diffraction, density, differential thermal analysis (DTA), metallography, microprobe analysis, and electrical resistivity. Attempts were made to prepare eight previously reported silicon-rich iridium silicide compounds by arc melting and Bridgman-like growth. However, microprobe analysis identified only five distinct compositions: IrSi, Ir4Si5, Ir3Si4, Ir3Si5 and IrSi(almost-equal-to 3). The existence of Ir2Si3, IrSi7, and IrSi2 could not be confirmed in this study. DTA in conjunction with X-ray powder diffraction confirm polymorphism in IrSi(almost-equal-to 3), determined to have orthorhombic and monoclinic unit cells in the high and low temperature forms. A eutectic composition alloy of 80.5 +/- 1 at.% Si was observed between IrSi(almost-equal-to 3) and silicon. Both IrSi5 and Ir3Si4 exhibit distinct metallic behavior while Ir3Si5 is semiconducting. IrSi and IrSi(almost!

PY - 1993 SP - 99 EP - 105 EP - T2 - Journal of Alloys and Compounds TI - Phase-Diagram and Electrical Behavior of Silicon-Rich Iridium Silicide Compounds UR - http://cvining.com/system/files/articles/vining/Allevato-JAlloysComp-1993.pdf VL - 200 ER -