TY - CONF AU - F. Edelman AU - M. Stolzer AU - T. Raz AU - Y. Komem AU - Cronin Vining AU - H. Zeindl AU - P. Zaumseil AB -

Amorphous Si1-xGex films (x=0, 0.25, 0.5, 0.75 and 1, having boron concentrations of 5.10/sup 18/, 5.10/sup 19/ and 5.10/sup 20/ cm/sup -3/), were deposited at low temperature by molecular beam processing on SiO/sub 2//Si(001) substrates. Samples were studied by in-situ TEM and in-situ XRD to follow the crystallization process. In addition, transport properties were studied in samples which were annealed in vacuum by a hot-wall furnace at temperatures between 500 and 900 degrees C for 1 hour. The microstructure of B-doped SiGe films is characterized by a relatively large grain size (about 1 mu m). The Si/sub 0.5/Ge/sub 0.5/ films have a rather high and temperature-independent Hall mobility (25 to 60 cm/sup 2//Vsec), Seebeck coefficient (~150 to 250 mu V/K at room temperature) and conductivity (200 to 2000 (Ohm cm)/sup -1/ at room temperature). Therefore, the highly-doped mu c-SiGe films that we produce in the present research project show transport characteristics comparable to the sintered SiGe materials for thermoelectric applications. (10 References).

BT - Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) C1 - XVI ICT '97. Proceedings ICT'97 16th International Conference on Thermoelectrics. Dresden, Germany. Sachsisches Staatsminist. Wissenschaft & Kunst. Deutsche Forschungsgemeinschaft. Eur. Comm., Directorate Gen. XII. U.S. Air Force Eur. Office of Aerosp. Res. & Dev. Inst. Solid State & Mater. Res. Dresden. 26-29 Aug. 1997 DA - 1997/// LA - eng N2 -

Amorphous Si1-xGex films (x=0, 0.25, 0.5, 0.75 and 1, having boron concentrations of 5.10/sup 18/, 5.10/sup 19/ and 5.10/sup 20/ cm/sup -3/), were deposited at low temperature by molecular beam processing on SiO/sub 2//Si(001) substrates. Samples were studied by in-situ TEM and in-situ XRD to follow the crystallization process. In addition, transport properties were studied in samples which were annealed in vacuum by a hot-wall furnace at temperatures between 500 and 900 degrees C for 1 hour. The microstructure of B-doped SiGe films is characterized by a relatively large grain size (about 1 mu m). The Si/sub 0.5/Ge/sub 0.5/ films have a rather high and temperature-independent Hall mobility (25 to 60 cm/sup 2//Vsec), Seebeck coefficient (~150 to 250 mu V/K at room temperature) and conductivity (200 to 2000 (Ohm cm)/sup -1/ at room temperature). Therefore, the highly-doped mu c-SiGe films that we produce in the present research project show transport characteristics comparable to the sintered SiGe materials for thermoelectric applications. (10 References).

PB - IEEE, New York, NY, USA. PY - 1997 EP - 5 EP - 232+ T2 - Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291) TI - Structure and transport properties of microcrystalline SiGe films UR - http://cvining.com/system/files/articles/vining/Edelman-ICT-1997.pdf ER -