TY - CONF KW - Cooling KW - Current density KW - Other direct energy conversion [B8460] KW - Chemical potential KW - conduction band edge KW - Conduction bands KW - Electrical conductivity KW - Electrical conductivity of other crystalline inorganic semiconductors [A7280J] KW - electrical currents KW - Electron emission, materials and cathodes [B2320] KW - first principles KW - Heat conduction KW - heat currents KW - instrumentation KW - Peltier effect KW - semiconductor/semiconductor thermionic barrier KW - solid state thermionic emission cooling KW - Thermionic emission KW - Thermionic emission (from surfaces) [A7940] KW - thermoelectric device performance KW - Thermoelectric devices KW - Thermoelectric effects (semiconductors/insulators) [A7220P] AU - M. Ulrich AU - Peter Barnes AU - Cronin Vining AB - We have reexamined solid state thermionic emission cooling from first principles and report two key results. First, electrical and heat currents over a semiconductor/semiconductor thermionic barrier are determined by the chemical potential measured from the conduction band edge, not the energy band offset between the two materials as is sometimes assumed. Second, we show the upper limit to the performance of thermionic emission cooling is equivalent to the performance of an optimized thermoelectric device made from the same material. An overview of this theory is presented and instrumentation being developed to experimentally verify the theory is discussed. (8 References). BT - Thermoelectric Materials 2000 - The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications (Materials Research Society Symposium Proceedings Vol.626). C1 - Thermoelectric Materials 2000 - The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications. Symposium. San Francisco, CA, USA. 24-27 April 2000. DA - 2000/// LA - eng N2 - We have reexamined solid state thermionic emission cooling from first principles and report two key results. First, electrical and heat currents over a semiconductor/semiconductor thermionic barrier are determined by the chemical potential measured from the conduction band edge, not the energy band offset between the two materials as is sometimes assumed. Second, we show the upper limit to the performance of thermionic emission cooling is equivalent to the performance of an optimized thermoelectric device made from the same material. An overview of this theory is presented and instrumentation being developed to experimentally verify the theory is discussed. (8 References). PB - Mater. Res. Soc., Warrendale, PA, USA. PY - 2000 EP - 6. EP - Z9.4.1+ T2 - Thermoelectric Materials 2000 - The Next Generation Materials for Small-Scale Refrigeration and Power Generation Applications (Materials Research Society Symposium Proceedings Vol.626). TI - Upper limitation to the performance of single-barrier thermionic emission cooling UR - http://cvining.com/system/files/articles/vining/Ulrich-MRS626-2000.pdf ER -