TY - JOUR
KW - PHONONS
KW - POINT-DEFECTS SCATTERING
KW - SEMICONDUCTOR ALLOYS
KW - SILICON
KW - THERMOREFLECTANCE
AU - D. Cahill
AU - F. Watanabe
AU - A. Rockett
AU - Cronin Vining
AB - The thermal conductivities of micron-thick epitaxial layers of dilute Si1-xGex alloys, 2x10(-4)< x < 0.01, are measured in the temperature range 297 < T < 550 K using time-domain thermoreflectance. These new data are used to test competing models for the strength of phonon scattering by heavy impurity atoms. Even though the mass difference between Ge and Si is much larger than the Si atomic mass, we find that the thermal conductivity of dilute SiGe alloys is adequately described by the scattering strength for point defects derived by perturbation theory by Klemens in 1955.
BT - Physical Review B
DA - 2005/06//
DO - 10.1103/PhysRevB.71.235202
IS - 23
LA - eng
N2 - The thermal conductivities of micron-thick epitaxial layers of dilute Si1-xGex alloys, 2x10(-4)< x < 0.01, are measured in the temperature range 297 < T < 550 K using time-domain thermoreflectance. These new data are used to test competing models for the strength of phonon scattering by heavy impurity atoms. Even though the mass difference between Ge and Si is much larger than the Si atomic mass, we find that the thermal conductivity of dilute SiGe alloys is adequately described by the scattering strength for point defects derived by perturbation theory by Klemens in 1955.
PY - 2005
SP - 235202
T2 - Physical Review B
TI - Thermal conductivity of epitaxial layers of dilute SiGe alloys
UR - http://cvining.com/system/files/articles/vining/Cahill-PRB-2005.pdf
VL - 71
ER -