@proceedings{1270,
  keywords = {Thermoelectric Materials, Thermoelectricity, Semiconductor materials, thermoelectric figure of merit, Ge-Si alloys, Thermoelectric conversion, semiconductor, doping level, Elemental semiconductors, material composition, microscopic material parameters, SiGe alloys, Silicon Germanium Alloys},
  author = {Cronin Vining},
  title = {High figure of merit thermoelectrics: Theoretical considerations},
  abstract = {The thermoelectric figure of merit of a semiconductor, ZT, can be calculated from a small number of microscopic material parameters, the material composition, the doping level, and the temperature. The functional dependence of ZT on these parameters has been studied for a range of material parameters using a recently developed model which accurately and self-consistently describes the thermoelectric properties of n-type silicon-germanium alloys. ZT values several times larger than current state-of-the-art values of ZT approximately 1 are shown to be entirely consistent with existing theory, even using material parameters already observed. A search for materials with much higher figure of merit values therefore remains of interest, in spite of several decades of relatively slow progress in this area.},
  year = {1990},
  journal = {Proceedings of the Intersociety Energy Conversion Engineering Conference},
  volume = {2},
  pages = {387-391, },
  month = {1990/08/12/17},
  publisher = {IEEE},
  language = {eng},
}