@proceedings{1265,
  keywords = {Thermoelectric Materials, Thermal conductivity, Seebeck effect, thermoelectric properties, Carrier mobility, DOPED MATERIALS, N &#150, RUTHENIUM SILICIDES, TEMPERATURE DEPENDENCE, TYPE CONDUCTORS, ELECTRIC CONDUCTIVITY, FABRICATION, high temperature, MEDIUM TEMPERATURE, VERY HIGH TEMPERATURE},
  author = {Cronin Vining and Joseph McCormack and Andrew Zoltan and Lesile Zoltan},
  title = {A promising new thermoelectric material: Ruthenium silicide},
  abstract = {Experimental and theoretical efforts directed toward increasing thermoelectric figure of merit values (ZT=S2T/, where =electrical condcutivity, S=Seeback coefficient and =thermal conductivity) by a factor of two or three have been encouraging in several respects. An accurate and detailed theoretical model developed for n-type silicon-germanium (SiGe) indicates that ZT values several times higher than currently available are expected under certain conditions. These new, high ZT materials are expected to be significantly different from SiGe, but not unreasonably so. Several promising candidate materials have been identified which may meet the conditions required by theory. One such candidate, ruthenium silicide, currently under development at the Jet Propulsion Laboratory, has been estimated to have the potential to exhibit figure of merit values four times higher than conventional SiGe materials. Recent results are summarized.},
  year = {1991},
  journal = {Proceedings of the eighth symposium on space nuclear power systems},
  volume = {217},
  pages = {458-463, },
  month = {1991/01/01/},
  publisher = {AIP},
  url = {http://cvining.com/system/files/articles/vining/Vining-SNPS-1991.pdf},
  language = {eng},
}