@proceedings{1212,
  author = {F. Edelman and M. Stolzer and T. Raz and Y. Komem and Cronin Vining and H. Zeindl and P. Zaumseil},
  title = {Structure and transport properties of microcrystalline SiGe films},
  abstract = {<p>Amorphous Si<sub>1-x</sub>Ge<sub>x</sub>&nbsp;films (x=0, 0.25, 0.5, 0.75 and 1, having boron concentrations of 5.10/sup 18/, 5.10/sup 19/ and 5.10/sup 20/ cm/sup -3/), were deposited at low temperature by molecular beam processing on SiO/sub 2//Si(001) substrates. Samples were studied by in-situ TEM and in-situ XRD to follow the crystallization process. In addition, transport properties were studied in samples which were annealed in vacuum by a hot-wall furnace at temperatures between 500 and 900 degrees C for 1 hour. The microstructure of B-doped SiGe films is characterized by a relatively large grain size (about 1 mu m). The Si/sub 0.5/Ge/sub 0.5/ films have a rather high and temperature-independent Hall mobility (25 to 60 cm/sup 2//Vsec), Seebeck coefficient (~150 to 250 mu V/K at room temperature) and conductivity (200 to 2000 (Ohm cm)/sup -1/ at room temperature). Therefore, the highly-doped mu c-SiGe films that we produce in the present research project show transport characteristics comparable to the sintered SiGe materials for thermoelectric applications. (10 References).</p>
},
  year = {1997},
  journal = {Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291)},
  pages = {5, 232+},
  month = {1997///},
  publisher = {IEEE, New York, NY, USA.},
  url = {http://cvining.com/system/files/articles/vining/Edelman-ICT-1997.pdf},
  language = {eng},
}